Name: Toshiba Electronic Devices and Storage Corporation 2SJ438(AISIN,Q,M)
Brand: Toshiba Electronic Devices and Storage Corporation
SKU: 2SJ438(AISIN,Q,M)
Availability: InStock

Technical Specifications

Series	*
Package	Bulk
Part Status	Obsolete
FET Type	-
Technology	-
Drain to Source Voltage (Vdss)	-
Current - Continuous Drain (Id) @ 25°C	5A (Tj)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	-
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	-
FET Feature	-
Power Dissipation (Max)	-
Operating Temperature	-
Mounting Type	Through Hole
Supplier Device Package	TO-220NIS
Package / Case	TO-220-3 Full Pack

Product Description

The Toshiba Electronic Devices and Storage Corporation 2SJ438(AISIN,Q,M) is a MOSFET P-CH TO220NIS. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Bulk, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine Toshiba Electronic Devices and Storage Corporation components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Bulk
Mounting Type: Through Hole

Whether you need the Toshiba Electronic Devices and Storage Corporation 2SJ438(AISIN,Q,M) for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.