Name: Toshiba Electronic Devices and Storage Corporation 2SK3700(F)
Brand: Toshiba Electronic Devices and Storage Corporation
SKU: 2SK3700(F)
Price: 2.21640 USD
Availability: InStock

Technical Specifications

Series	*
Package	Bulk
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	900 V
Current - Continuous Drain (Id) @ 25°C	5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	2.5Ohm @ 3A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	28 nC @ 10 V
Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	1150 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	150W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-3P(N)
Package / Case	TO-3P-3, SC-65-3

Product Description

The Toshiba Electronic Devices and Storage Corporation 2SK3700(F) is a MOSFET N-CH 900V 5A TO3P. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Bulk, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine Toshiba Electronic Devices and Storage Corporation components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Bulk
Mounting Type: Through Hole

Whether you need the Toshiba Electronic Devices and Storage Corporation 2SK3700(F) for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.