Name: Toshiba Electronic Devices and Storage Corporation 2SK4017(Q)
Brand: Toshiba Electronic Devices and Storage Corporation
SKU: 2SK4017(Q)
Availability: InStock

Technical Specifications

Series	U-MOSIII
Package	Bulk
Part Status	Last Time Buy
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Rds On (Max) @ Id, Vgs	100mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	730 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	20W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PW-MOLD2
Package / Case	TO-251-3 Stub Leads, IPak

Product Description

The Toshiba Electronic Devices and Storage Corporation 2SK4017(Q) is a MOSFET N-CH 60V 5A PW-MOLD2. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Bulk, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine Toshiba Electronic Devices and Storage Corporation components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Bulk
Mounting Type: Through Hole

Whether you need the Toshiba Electronic Devices and Storage Corporation 2SK4017(Q) for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.