Name: Toshiba Electronic Devices and Storage Corporation GT30J121(Q)
Brand: Toshiba Electronic Devices and Storage Corporation
SKU: GT30J121(Q)
Price: 2.90960 USD
Availability: InStock

Technical Specifications

Series	*
Package	Tube
Part Status	Active
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	30 A
Current - Collector Pulsed (Icm)	60 A
Vce(on) (Max) @ Vge, Ic	2.45V @ 15V, 30A
Power - Max	170 W
Switching Energy	1mJ (on), 800µJ (off)
Input Type	Standard
Gate Charge	-
Td (on/off) @ 25°C	90ns/300ns
Test Condition	300V, 30A, 24Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Supplier Device Package	TO-3P(N)

Product Description

The Toshiba Electronic Devices and Storage Corporation GT30J121(Q) is a IGBT 600V 30A 170W TO3PN. This component belongs to the Transistors - IGBTs - Single category and features Package of Tube, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine Toshiba Electronic Devices and Storage Corporation components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tube
Mounting Type: Through Hole

Whether you need the Toshiba Electronic Devices and Storage Corporation GT30J121(Q) for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.