Name: Toshiba Electronic Devices and Storage Corporation MT3S111TU,LF
Brand: Toshiba Electronic Devices and Storage Corporation
SKU: MT3S111TU,LF
Price: 0.58000 USD
Availability: InStock

Technical Specifications

Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	6V
Frequency - Transition	10GHz
Noise Figure (dB Typ @ f)	0.6dB ~ 0.85dB @ 500MHz ~ 1GHz
Gain	12.5dB
Power - Max	800mW
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 30mA, 5V
Current - Collector (Ic) (Max)	100mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	3-SMD, Flat Lead
Supplier Device Package	UFM

Product Description

The Toshiba Electronic Devices and Storage Corporation MT3S111TU,LF is a RF SIGE NPN BIPOLAR TRANSISTOR N. This component belongs to the Transistors - Bipolar (BJT) - RF category and features Package of Tape & Reel (TR)Cut Tape (CT)Digi-Reel®, Mounting Type of Surface Mount. As an authorized distributor, SecureChip offers genuine Toshiba Electronic Devices and Storage Corporation components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Mounting Type: Surface Mount

Whether you need the Toshiba Electronic Devices and Storage Corporation MT3S111TU,LF for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.