Name: Toshiba Electronic Devices and Storage Corporation RN1113MFV,L3F
Brand: Toshiba Electronic Devices and Storage Corporation
SKU: RN1113MFV,L3F
Price: 0.02926 USD
Availability: InStock

Technical Specifications

Series	-
Package	Tape & Reel (TR)
Part Status	Active
Transistor Type	NPN - Pre-Biased
Current - Collector (Ic) (Max)	100 mA
Voltage - Collector Emitter Breakdown (Max)	50 V
Resistor - Base (R1)	47 kOhms
Resistor - Emitter Base (R2)	-
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 500µA, 5mA
Current - Collector Cutoff (Max)	100nA (ICBO)
Frequency - Transition	-
Power - Max	150 mW
Mounting Type	Surface Mount
Package / Case	SOT-723
Supplier Device Package	VESM

Product Description

The Toshiba Electronic Devices and Storage Corporation RN1113MFV,L3F is a TRANS PREBIAS NPN 50V 0.1A VESM. This component belongs to the Transistors - Bipolar (BJT) - Single, Pre-Biased category and features Package of Tape & Reel (TR), Mounting Type of Surface Mount. As an authorized distributor, SecureChip offers genuine Toshiba Electronic Devices and Storage Corporation components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tape & Reel (TR)
Mounting Type: Surface Mount

Whether you need the Toshiba Electronic Devices and Storage Corporation RN1113MFV,L3F for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.