Toshiba Electronic Devices and Storage Corporation SSM3K35MFV,L3F

MOSFET N-CH 20V 180MA VESM

In Stock: 15,422 Genuine Part Fast Shipping
Toshiba Electronic Devices and Storage Corporation SSM3K35MFV,L3F
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Key Specifications

Series -
Package Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 180mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4V

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Technical Specifications

Series -
Package Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 180mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4V
Rds On (Max) @ Id, Vgs 3Ohm @ 50mA, 4V
Vgs(th) (Max) @ Id 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 9.5 pF @ 3 V
FET Feature -
Power Dissipation (Max) 150mW (Ta)
Operating Temperature 150°C
Mounting Type Surface Mount
Supplier Device Package VESM
Package / Case SOT-723

Product Description

The Toshiba Electronic Devices and Storage Corporation SSM3K35MFV,L3F is a MOSFET N-CH 20V 180MA VESM. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tape & Reel (TR), Mounting Type of Surface Mount. As an authorized distributor, SecureChip offers genuine Toshiba Electronic Devices and Storage Corporation components with competitive pricing and fast delivery worldwide.

Key Specifications

  • Package: Tape & Reel (TR)
  • Mounting Type: Surface Mount

Whether you need the Toshiba Electronic Devices and Storage Corporation SSM3K35MFV,L3F for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.

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