Toshiba Electronic Devices and Storage Corporation SSM6G18NU,LF

MOSFET P-CH 20V 2A 6UDFN

In Stock: 38,461 Genuine Part Fast Shipping
Toshiba Electronic Devices and Storage Corporation SSM6G18NU,LF
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Key Specifications

Series -
Package Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V

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Technical Specifications

Series -
Package Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 112mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 4.6 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 270 pF @ 10 V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 1W (Ta)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-UDFN (2x2)
Package / Case 6-WDFN Exposed Pad

Product Description

The Toshiba Electronic Devices and Storage Corporation SSM6G18NU,LF is a MOSFET P-CH 20V 2A 6UDFN. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tape & Reel (TR)Cut Tape (CT)Digi-Reel®, Mounting Type of Surface Mount. As an authorized distributor, SecureChip offers genuine Toshiba Electronic Devices and Storage Corporation components with competitive pricing and fast delivery worldwide.

Key Specifications

  • Package: Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
  • Mounting Type: Surface Mount

Whether you need the Toshiba Electronic Devices and Storage Corporation SSM6G18NU,LF for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.

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