Name: Toshiba Electronic Devices and Storage Corporation TK10A80W,S4X
Brand: Toshiba Electronic Devices and Storage Corporation
SKU: TK10A80W,S4X
Price: 2.52440 USD
Availability: InStock

Technical Specifications

Series	DTMOSIV
Package	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800 V
Current - Continuous Drain (Id) @ 25°C	9.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	550mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id	4V @ 450µA
Gate Charge (Qg) (Max) @ Vgs	19 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1150 pF @ 300 V
FET Feature	-
Power Dissipation (Max)	40W (Tc)
Operating Temperature	150°C
Mounting Type	Through Hole
Supplier Device Package	TO-220SIS
Package / Case	TO-220-3 Full Pack

Product Description

The Toshiba Electronic Devices and Storage Corporation TK10A80W,S4X is a MOSFET N-CH 800V 9.5A TO220SIS. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tube, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine Toshiba Electronic Devices and Storage Corporation components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tube
Mounting Type: Through Hole

Whether you need the Toshiba Electronic Devices and Storage Corporation TK10A80W,S4X for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.