Name: Toshiba Electronic Devices and Storage Corporation TK12Q60W,S1VQ
Brand: Toshiba Electronic Devices and Storage Corporation
SKU: TK12Q60W,S1VQ
Price: 1.65000 USD
Availability: InStock

Technical Specifications

Series	DTMOSIV
Package	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	11.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	340mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id	3.7V @ 600µA
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	890 pF @ 300 V
FET Feature	Super Junction
Power Dissipation (Max)	100W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	I-PAK
Package / Case	TO-251-3 Stub Leads, IPak

Product Description

The Toshiba Electronic Devices and Storage Corporation TK12Q60W,S1VQ is a MOSFET N CH 600V 11.5A IPAK. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tube, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine Toshiba Electronic Devices and Storage Corporation components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tube
Mounting Type: Through Hole

Whether you need the Toshiba Electronic Devices and Storage Corporation TK12Q60W,S1VQ for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.