Toshiba Electronic Devices and Storage Corporation TK16J60W,S1VQ

MOSFET N-CH 600V 15.8A TO3P

In Stock: 13,253 Genuine Part Fast Shipping
Toshiba Electronic Devices and Storage Corporation TK16J60W,S1VQ
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Key Specifications

Series DTMOSIV
Package Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 15.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V

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Technical Specifications

Series DTMOSIV
Package Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 15.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 7.9A, 10V
Vgs(th) (Max) @ Id 3.7V @ 790µA
Gate Charge (Qg) (Max) @ Vgs 38 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1350 pF @ 300 V
FET Feature Super Junction
Power Dissipation (Max) 130W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3P(N)
Package / Case TO-3P-3, SC-65-3

Product Description

The Toshiba Electronic Devices and Storage Corporation TK16J60W,S1VQ is a MOSFET N-CH 600V 15.8A TO3P. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tube, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine Toshiba Electronic Devices and Storage Corporation components with competitive pricing and fast delivery worldwide.

Key Specifications

  • Package: Tube
  • Mounting Type: Through Hole

Whether you need the Toshiba Electronic Devices and Storage Corporation TK16J60W,S1VQ for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.

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