Toshiba Electronic Devices and Storage Corporation TK20A60U(Q,M)

MOSFET N-CH 600V 20A TO220SIS

In Stock: 18,305 Genuine Part Fast Shipping
Toshiba Electronic Devices and Storage Corporation TK20A60U(Q,M)
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Key Specifications

Series DTMOSII
Package Tube
Part Status Last Time Buy
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V

Pricing

Quantity Unit Price (USD)
1+ $6.0200
50+ $4.8391
100+ $4.4091
500+ $3.5702
1,000+ $3.0110
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Technical Specifications

Series DTMOSII
Package Tube
Part Status Last Time Buy
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 27 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1470 pF @ 10 V
FET Feature -
Power Dissipation (Max) 45W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220SIS
Package / Case TO-220-3 Full Pack

Product Description

The Toshiba Electronic Devices and Storage Corporation TK20A60U(Q,M) is a MOSFET N-CH 600V 20A TO220SIS. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tube, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine Toshiba Electronic Devices and Storage Corporation components with competitive pricing and fast delivery worldwide.

Key Specifications

  • Package: Tube
  • Mounting Type: Through Hole

Whether you need the Toshiba Electronic Devices and Storage Corporation TK20A60U(Q,M) for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.

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