Toshiba Electronic Devices and Storage Corporation TK25E60X5,S1X

MOSFET N-CH 600V 25A TO220

In Stock: 18,081 Genuine Part Fast Shipping
Toshiba Electronic Devices and Storage Corporation TK25E60X5,S1X
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Key Specifications

Series DTMOSIV-H
Package Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 25A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V

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1+ $3.7124
50+ $3.7124
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Technical Specifications

Series DTMOSIV-H
Package Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 25A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 140mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2400 pF @ 300 V
FET Feature -
Power Dissipation (Max) 180W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3

Product Description

The Toshiba Electronic Devices and Storage Corporation TK25E60X5,S1X is a MOSFET N-CH 600V 25A TO220. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tube, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine Toshiba Electronic Devices and Storage Corporation components with competitive pricing and fast delivery worldwide.

Key Specifications

  • Package: Tube
  • Mounting Type: Through Hole

Whether you need the Toshiba Electronic Devices and Storage Corporation TK25E60X5,S1X for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.

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