Toshiba Electronic Devices and Storage Corporation TK25N60X5,S1F

MOSFET N-CH 600V 25A TO247

In Stock: 16,864 Genuine Part Fast Shipping
Toshiba Electronic Devices and Storage Corporation TK25N60X5,S1F
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Key Specifications

Series DTMOSIV-H
Package Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 25A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V

Pricing

Quantity Unit Price (USD)
1+ $4.3700
30+ $3.5116
120+ $3.1995
510+ $2.5908
1,020+ $2.1850
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Technical Specifications

Series DTMOSIV-H
Package Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 25A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 140mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2400 pF @ 300 V
FET Feature -
Power Dissipation (Max) 180W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247
Package / Case TO-247-3

Product Description

The Toshiba Electronic Devices and Storage Corporation TK25N60X5,S1F is a MOSFET N-CH 600V 25A TO247. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tube, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine Toshiba Electronic Devices and Storage Corporation components with competitive pricing and fast delivery worldwide.

Key Specifications

  • Package: Tube
  • Mounting Type: Through Hole

Whether you need the Toshiba Electronic Devices and Storage Corporation TK25N60X5,S1F for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.

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