Name: Toshiba Electronic Devices and Storage Corporation TK32E12N1,S1X
Brand: Toshiba Electronic Devices and Storage Corporation
SKU: TK32E12N1,S1X
Price: 1.46000 USD
Availability: InStock

Technical Specifications

Series	U-MOSVIII-H
Package	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	120 V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	13.8mOhm @ 16A, 10V
Vgs(th) (Max) @ Id	4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs	34 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2000 pF @ 60 V
FET Feature	-
Power Dissipation (Max)	98W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3

Product Description

The Toshiba Electronic Devices and Storage Corporation TK32E12N1,S1X is a MOSFET N CH 120V 60A TO-220. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tube, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine Toshiba Electronic Devices and Storage Corporation components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tube
Mounting Type: Through Hole

Whether you need the Toshiba Electronic Devices and Storage Corporation TK32E12N1,S1X for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.