Name: Toshiba Electronic Devices and Storage Corporation TK8Q65W,S1Q
Brand: Toshiba Electronic Devices and Storage Corporation
SKU: TK8Q65W,S1Q
Price: 1.64000 USD
Availability: InStock

Technical Specifications

Series	DTMOSIV
Package	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	7.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	670mOhm @ 3.9A, 10V
Vgs(th) (Max) @ Id	3.5V @ 300µA
Gate Charge (Qg) (Max) @ Vgs	16 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	570 pF @ 300 V
FET Feature	-
Power Dissipation (Max)	80W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	I-PAK
Package / Case	TO-251-3 Stub Leads, IPak

Product Description

The Toshiba Electronic Devices and Storage Corporation TK8Q65W,S1Q is a MOSFET N-CH 650V 7.8A IPAK. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tube, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine Toshiba Electronic Devices and Storage Corporation components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tube
Mounting Type: Through Hole

Whether you need the Toshiba Electronic Devices and Storage Corporation TK8Q65W,S1Q for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.