Toshiba Electronic Devices and Storage Corporation TPC8212-H(TE12LQ,M

MOSFET 2N-CH 30V 6A SOP8

In Stock: 14,705 Genuine Part Fast Shipping
Toshiba Electronic Devices and Storage Corporation TPC8212-H(TE12LQ,M
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Key Specifications

Series -
Package Tape & Reel (TR)
Part Status Obsolete
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 6A
Rds On (Max) @ Id, Vgs 21mOhm @ 3A, 10V

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Technical Specifications

Series -
Package Tape & Reel (TR)
Part Status Obsolete
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 6A
Rds On (Max) @ Id, Vgs 21mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 840pF @ 10V
Power - Max 450mW
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package 8-SOP (5.5x6.0)

Product Description

The Toshiba Electronic Devices and Storage Corporation TPC8212-H(TE12LQ,M is a MOSFET 2N-CH 30V 6A SOP8. This component belongs to the Transistors - FETs, MOSFETs - Arrays category and features Package of Tape & Reel (TR), Mounting Type of Surface Mount. As an authorized distributor, SecureChip offers genuine Toshiba Electronic Devices and Storage Corporation components with competitive pricing and fast delivery worldwide.

Key Specifications

  • Package: Tape & Reel (TR)
  • Mounting Type: Surface Mount

Whether you need the Toshiba Electronic Devices and Storage Corporation TPC8212-H(TE12LQ,M for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.

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