Name: Toshiba Electronic Devices and Storage Corporation TPN4R712MD,L1Q
Brand: Toshiba Electronic Devices and Storage Corporation
SKU: TPN4R712MD,L1Q
Price: 0.80000 USD
Availability: InStock

Technical Specifications

Series	U-MOSVI
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	4.7mOhm @ 18A, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	65 nC @ 5 V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	4300 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	42W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-TSON Advance (3.3x3.3)
Package / Case	8-PowerVDFN

Product Description

The Toshiba Electronic Devices and Storage Corporation TPN4R712MD,L1Q is a MOSFET P-CH 20V 36A 8TSON. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tape & Reel (TR)Cut Tape (CT)Digi-Reel®, Mounting Type of Surface Mount. As an authorized distributor, SecureChip offers genuine Toshiba Electronic Devices and Storage Corporation components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Mounting Type: Surface Mount

Whether you need the Toshiba Electronic Devices and Storage Corporation TPN4R712MD,L1Q for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.