Toshiba Electronic Devices and Storage Corporation TRS12E65F,S1Q

DODE SCHOTTKY 650V TO220

In Stock: 18,532 Genuine Part Fast Shipping
Toshiba Electronic Devices and Storage Corporation TRS12E65F,S1Q
Click to enlarge

Key Specifications

Series -
Package Tube
Part Status Active
Diode Type Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 12A (DC)
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 12 A
Speed No Recovery Time > 500mA (Io)

Pricing

Quantity Unit Price (USD)
1+ $5.8600
Active RoHS Compliant

Quick inquiry

Genuine
Fast Ship
Support

Technical Specifications

Series -
Package Tube
Part Status Active
Diode Type Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 12A (DC)
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 12 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 90 µA @ 650 V
Capacitance @ Vr, F 65pF @ 650V, 1MHz
Mounting Type Through Hole
Package / Case TO-220-2
Supplier Device Package TO-220-2L
Operating Temperature - Junction 175°C (Max)

Product Description

The Toshiba Electronic Devices and Storage Corporation TRS12E65F,S1Q is a DODE SCHOTTKY 650V TO220. This component belongs to the Diodes - Rectifiers - Single category and features Package of Tube, Mounting Type of Through Hole, Speed of No Recovery Time > 500mA (Io). As an authorized distributor, SecureChip offers genuine Toshiba Electronic Devices and Storage Corporation components with competitive pricing and fast delivery worldwide.

Key Specifications

  • Package: Tube
  • Mounting Type: Through Hole
  • Speed: No Recovery Time > 500mA (Io)

Whether you need the Toshiba Electronic Devices and Storage Corporation TRS12E65F,S1Q for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.

Related Products

MUR120RLG - DIODE GEN PURP 200V 1A AXIAL
MUR120RLG

DIODE GEN PURP 200V 1A AXIAL

Sanyo Semiconductor/ON Semiconductor
US1J-E3/61T - DIODE GEN PURP 600V 1A DO214AC
US1J-E3/61T

DIODE GEN PURP 600V 1A DO214AC

Vishay General Semiconductor – Diodes Division
SSL310A-F1-0000HF - DIODE SCHOTTKY 100V 3A DO214AC
SSL310A-F1-0000HF

DIODE SCHOTTKY 100V 3A DO214AC

JANTXV1N5623 - DIODE GEN PURP 1KV 1A AXIAL
JANTXV1N5623

DIODE GEN PURP 1KV 1A AXIAL

Roving Networks / Microchip Technology
UG8JT-E3/45 - DIODE GEN PURP 600V 8A TO220AC
UG8JT-E3/45

DIODE GEN PURP 600V 8A TO220AC

Vishay General Semiconductor – Diodes Division
SD107WS-TP - DIODE SCHOTTKY 30V 100MA SOD323
SD107WS-TP

DIODE SCHOTTKY 30V 100MA SOD323

Micro Commercial Components (MCC)
SDM1L30CSP-7 - DIODE SCHOTTKY 30V 1A 2CSP
SDM1L30CSP-7

DIODE SCHOTTKY 30V 1A 2CSP

Zetex Semiconductors (Diodes Inc.)
1SS187,LF - DIODE GEN PURP 80V 100MA S-MINI
1SS187,LF

DIODE GEN PURP 80V 100MA S-MINI

Toshiba Electronic Devices and Storage Corporation

Hot Products

BYC15X-600PQ - DIODE GEN PURP 600V 15A TO220F
BYC15X-600PQ

DIODE GEN PURP 600V 15A TO220F

MURS360SHE3_A/H - DIODE GEN PURP 600V 1.5A DO214AA
MURS360SHE3_A/H

DIODE GEN PURP 600V 1.5A DO214AA

HS3K-F1-0000 - DIODE GEN PURP 800V 3A DO214AB
HS3K-F1-0000

DIODE GEN PURP 800V 3A DO214AB

MURS120-F1-0000HF - DIODE GEN PURP 200V 1A DO214AC
MURS120-F1-0000...

DIODE GEN PURP 200V 1A DO214AC

S120-F1-0000HF - DIODE SCHOTTKY 200V 1A SOD123FL
S120-F1-0000HF

DIODE SCHOTTKY 200V 1A SOD123FL

CDBB3150LR-HF - DIODE SCHOTTKY 150V 3A DO214AA
CDBB3150LR-HF

DIODE SCHOTTKY 150V 3A DO214AA

S2JA-13-F - DIODE GEN PURP 600V 1.5A SMA
S2JA-13-F

DIODE GEN PURP 600V 1.5A SMA

FRL1B - DIODE FR SOD-123FL 100V 1A
FRL1B

DIODE FR SOD-123FL 100V 1A

BY550-50 - DIODE STD D5.4X7.5 50V 5A
BY550-50

DIODE STD D5.4X7.5 50V 5A

SMS250 - SCHOTTKY MELF 50V 2A
SMS250

SCHOTTKY MELF 50V 2A

BAV101 - DIODE SFR DO-213AA 110V 0.2A
BAV101

DIODE SFR DO-213AA 110V 0.2A

DK015L - DIODE GEN PURP 1KV 9.5A TO220
DK015L

DIODE GEN PURP 1KV 9.5A TO220

Top