Name: Toshiba Electronic Devices and Storage Corporation TRS3E65F,S1Q
Brand: Toshiba Electronic Devices and Storage Corporation
SKU: TRS3E65F,S1Q
Price: 2.08000 USD
Availability: InStock

Technical Specifications

Series	-
Package	Tube
Part Status	Active
Diode Type	Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)	650 V
Current - Average Rectified (Io)	3A (DC)
Voltage - Forward (Vf) (Max) @ If	1.6 V @ 3 A
Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0 ns
Current - Reverse Leakage @ Vr	20 µA @ 650 V
Capacitance @ Vr, F	12pF @ 650V, 1MHz
Mounting Type	Through Hole
Package / Case	TO-220-2
Supplier Device Package	TO-220-2L
Operating Temperature - Junction	175°C (Max)

Product Description

The Toshiba Electronic Devices and Storage Corporation TRS3E65F,S1Q is a PB-F DIODE TO-220-2L V=650 IF=3A. This component belongs to the Diodes - Rectifiers - Single category and features Package of Tube, Mounting Type of Through Hole, Speed of No Recovery Time > 500mA (Io). As an authorized distributor, SecureChip offers genuine Toshiba Electronic Devices and Storage Corporation components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tube
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)

Whether you need the Toshiba Electronic Devices and Storage Corporation TRS3E65F,S1Q for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.