Toshiba Electronic Devices and Storage Corporation TRS4E65F,S1Q

PB-F DIODE TO-220-2L V=650 IF=4A

In Stock: 11,857 Genuine Part Fast Shipping
Toshiba Electronic Devices and Storage Corporation TRS4E65F,S1Q
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Key Specifications

Series -
Package Tube
Part Status Active
Diode Type Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 4A (DC)
Voltage - Forward (Vf) (Max) @ If 1.6 V @ 4 A
Speed No Recovery Time > 500mA (Io)

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Technical Specifications

Series -
Package Tube
Part Status Active
Diode Type Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 4A (DC)
Voltage - Forward (Vf) (Max) @ If 1.6 V @ 4 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 20 µA @ 650 V
Capacitance @ Vr, F 16pF @ 650V, 1MHz
Mounting Type Through Hole
Package / Case TO-220-2
Supplier Device Package TO-220-2L
Operating Temperature - Junction 175°C (Max)

Product Description

The Toshiba Electronic Devices and Storage Corporation TRS4E65F,S1Q is a PB-F DIODE TO-220-2L V=650 IF=4A. This component belongs to the Diodes - Rectifiers - Single category and features Package of Tube, Mounting Type of Through Hole, Speed of No Recovery Time > 500mA (Io). As an authorized distributor, SecureChip offers genuine Toshiba Electronic Devices and Storage Corporation components with competitive pricing and fast delivery worldwide.

Key Specifications

  • Package: Tube
  • Mounting Type: Through Hole
  • Speed: No Recovery Time > 500mA (Io)

Whether you need the Toshiba Electronic Devices and Storage Corporation TRS4E65F,S1Q for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.

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