Name: Toshiba Electronic Devices and Storage Corporation TW070J120B,S1Q
Brand: Toshiba Electronic Devices and Storage Corporation
SKU: TW070J120B,S1Q
Price: 33.97000 USD
Availability: InStock

Technical Specifications

Series	*
Package	Tube
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	20V
Rds On (Max) @ Id, Vgs	90mOhm @ 18A, 20V
Vgs(th) (Max) @ Id	5.8V @ 20mA
Gate Charge (Qg) (Max) @ Vgs	67 nC @ 20 V
Vgs (Max)	±25V, -10V
Input Capacitance (Ciss) (Max) @ Vds	1680 pF @ 800 V
FET Feature	Standard
Power Dissipation (Max)	272W (Tc)
Operating Temperature	-55°C ~ 175°C
Mounting Type	Through Hole
Supplier Device Package	TO-3P(N)
Package / Case	TO-3P-3, SC-65-3

Product Description

The Toshiba Electronic Devices and Storage Corporation TW070J120B,S1Q is a SICFET N-CH 1200V 36A TO3P. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tube, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine Toshiba Electronic Devices and Storage Corporation components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tube
Mounting Type: Through Hole

Whether you need the Toshiba Electronic Devices and Storage Corporation TW070J120B,S1Q for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.