GANFET N-CH 650V 35A TO247-3
| Series | Automotive, AEC-Q101 |
| Package | Tube |
| Part Status | Not For New Designs |
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Quantity | Unit Price (USD) |
|---|---|
| 1+ | $22.9700 |
| 10+ | $21.2473 |
| 30+ | $19.5245 |
| 120+ | $18.1463 |
| 270+ | $16.6533 |
| 510+ | $16.0790 |
| Series | Automotive, AEC-Q101 |
| Package | Tube |
| Part Status | Not For New Designs |
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 62mOhm @ 22A, 8V |
| Vgs(th) (Max) @ Id | 2.6V @ 700µA |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 8 V |
| Vgs (Max) | ±18V |
| Input Capacitance (Ciss) (Max) @ Vds | 2200 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3 |
| Package / Case | TO-247-3 |
The Transphorm TPH3205WSBQA is a GANFET N-CH 650V 35A TO247-3. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tube, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine Transphorm components with competitive pricing and fast delivery worldwide.
Whether you need the Transphorm TPH3205WSBQA for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.