Transphorm TPH3206LSGB

GANFET N-CH 650V 16A 3PQFN

In Stock: 13,184 Genuine Part Fast Shipping
Transphorm TPH3206LSGB
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Key Specifications

Series -
Package Tray
Part Status Obsolete
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 8V

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Technical Specifications

Series -
Package Tray
Part Status Obsolete
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 8V
Rds On (Max) @ Id, Vgs 180mOhm @ 10A, 8V
Vgs(th) (Max) @ Id 2.6V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 6.2 nC @ 4.5 V
Vgs (Max) ±18V
Input Capacitance (Ciss) (Max) @ Vds 720 pF @ 480 V
FET Feature -
Power Dissipation (Max) 81W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 3-PQFN (8x8)
Package / Case 3-PowerDFN

Product Description

The Transphorm TPH3206LSGB is a GANFET N-CH 650V 16A 3PQFN. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tray, Mounting Type of Surface Mount. As an authorized distributor, SecureChip offers genuine Transphorm components with competitive pricing and fast delivery worldwide.

Key Specifications

  • Package: Tray
  • Mounting Type: Surface Mount

Whether you need the Transphorm TPH3206LSGB for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.

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