GANFET N-CH 650V 16A TO220AB
| Series | - |
| Package | Tube |
| Part Status | Last Time Buy |
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Quantity | Unit Price (USD) |
|---|---|
| 1+ | $10.6800 |
| 10+ | $9.6120 |
| 50+ | $8.7576 |
| 100+ | $7.9032 |
| 250+ | $7.2624 |
| 500+ | $6.6216 |
| 1,000+ | $5.9808 |
| Series | - |
| Package | Tube |
| Part Status | Last Time Buy |
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 10A, 8V |
| Vgs(th) (Max) @ Id | 2.6V @ 500µA |
| Gate Charge (Qg) (Max) @ Vgs | 6.2 nC @ 4.5 V |
| Vgs (Max) | ±18V |
| Input Capacitance (Ciss) (Max) @ Vds | 720 pF @ 480 V |
| FET Feature | - |
| Power Dissipation (Max) | 81W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
The Transphorm TPH3206PSB is a GANFET N-CH 650V 16A TO220AB. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tube, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine Transphorm components with competitive pricing and fast delivery worldwide.
Whether you need the Transphorm TPH3206PSB for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.