Name: Transphorm TPH3207WS
Brand: Transphorm
SKU: TPH3207WS
Price: 33.20000 USD
Availability: InStock

Technical Specifications

Series	-
Package	Tube
Part Status	Obsolete
FET Type	N-Channel
Technology	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	41mOhm @ 32A, 8V
Vgs(th) (Max) @ Id	2.65V @ 700µA
Gate Charge (Qg) (Max) @ Vgs	42 nC @ 8 V
Vgs (Max)	±18V
Input Capacitance (Ciss) (Max) @ Vds	2197 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	178W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247-3
Package / Case	TO-247-3

Product Description

The Transphorm TPH3207WS is a GANFET N-CH 650V 50A TO247-3. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tube, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine Transphorm components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tube
Mounting Type: Through Hole

Whether you need the Transphorm TPH3207WS for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.