Vishay General Semiconductor – Diodes Division 1N4150W-HE3-18

DIODE GEN PURP 50V 200MA SOD123

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Vishay General Semiconductor – Diodes Division 1N4150W-HE3-18
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Key Specifications

Series -
Package Tape & Reel (TR)
Part Status Active
Diode Type Standard
Voltage - DC Reverse (Vr) (Max) 50 V
Current - Average Rectified (Io) 200mA
Voltage - Forward (Vf) (Max) @ If 1 V @ 200 mA
Speed Small Signal =< 200mA (Io), Any Speed

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Quantity Unit Price (USD)
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10,000+ $0.0374
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Technical Specifications

Series -
Package Tape & Reel (TR)
Part Status Active
Diode Type Standard
Voltage - DC Reverse (Vr) (Max) 50 V
Current - Average Rectified (Io) 200mA
Voltage - Forward (Vf) (Max) @ If 1 V @ 200 mA
Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 4 ns
Current - Reverse Leakage @ Vr 100 nA @ 50 V
Capacitance @ Vr, F 2.5pF @ 0V, 1MHz
Mounting Type Surface Mount
Package / Case SOD-123
Supplier Device Package SOD-123
Operating Temperature - Junction -55°C ~ 150°C

Product Description

The Vishay General Semiconductor – Diodes Division 1N4150W-HE3-18 is a DIODE GEN PURP 50V 200MA SOD123. This component belongs to the Diodes - Rectifiers - Single category and features Package of Tape & Reel (TR), Mounting Type of Surface Mount, Speed of Small Signal =< 200mA (Io), Any Speed. As an authorized distributor, SecureChip offers genuine Vishay General Semiconductor – Diodes Division components with competitive pricing and fast delivery worldwide.

Key Specifications

  • Package: Tape & Reel (TR)
  • Mounting Type: Surface Mount
  • Speed: Small Signal =< 200mA (Io), Any Speed

Whether you need the Vishay General Semiconductor – Diodes Division 1N4150W-HE3-18 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.

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