Vishay General Semiconductor – Diodes Division 1N5062TAP

DIODE AVALANCHE 800V 2A SOD57

In Stock: 34,482 Genuine Part Fast Shipping
Vishay General Semiconductor – Diodes Division 1N5062TAP
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Key Specifications

Series -
Package Cut Tape (CT)Tape & Box (TB)
Part Status Active
Diode Type Avalanche
Voltage - DC Reverse (Vr) (Max) 800 V
Current - Average Rectified (Io) 2A
Voltage - Forward (Vf) (Max) @ If 1.15 V @ 2.5 A
Speed Fast Recovery =< 500ns, > 200mA (Io)

Pricing

Quantity Unit Price (USD)
1+ $0.5800
5,000+ $0.1802
10,000+ $0.1740
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Technical Specifications

Series -
Package Cut Tape (CT)Tape & Box (TB)
Part Status Active
Diode Type Avalanche
Voltage - DC Reverse (Vr) (Max) 800 V
Current - Average Rectified (Io) 2A
Voltage - Forward (Vf) (Max) @ If 1.15 V @ 2.5 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 4 µs
Current - Reverse Leakage @ Vr 1 µA @ 800 V
Capacitance @ Vr, F 40pF @ 0V, 1MHz
Mounting Type Through Hole
Package / Case SOD-57, Axial
Supplier Device Package SOD-57
Operating Temperature - Junction -55°C ~ 175°C

Product Description

The Vishay General Semiconductor – Diodes Division 1N5062TAP is a DIODE AVALANCHE 800V 2A SOD57. This component belongs to the Diodes - Rectifiers - Single category and features Package of Cut Tape (CT)Tape & Box (TB), Mounting Type of Through Hole, Speed of Fast Recovery =< 500ns, > 200mA (Io). As an authorized distributor, SecureChip offers genuine Vishay General Semiconductor – Diodes Division components with competitive pricing and fast delivery worldwide.

Key Specifications

  • Package: Cut Tape (CT)Tape & Box (TB)
  • Mounting Type: Through Hole
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)

Whether you need the Vishay General Semiconductor – Diodes Division 1N5062TAP for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.

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