Vishay General Semiconductor – Diodes Division 1N5406-E3/51

DIODE GEN PURP 600V 3A DO201AD

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Vishay General Semiconductor – Diodes Division 1N5406-E3/51
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Key Specifications

Series -
Package Bulk
Part Status Obsolete
Diode Type Standard
Voltage - DC Reverse (Vr) (Max) 600 V
Current - Average Rectified (Io) 3A
Voltage - Forward (Vf) (Max) @ If 1.2 V @ 3 A
Speed Standard Recovery >500ns, > 200mA (Io)

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Technical Specifications

Series -
Package Bulk
Part Status Obsolete
Diode Type Standard
Voltage - DC Reverse (Vr) (Max) 600 V
Current - Average Rectified (Io) 3A
Voltage - Forward (Vf) (Max) @ If 1.2 V @ 3 A
Speed Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) -
Current - Reverse Leakage @ Vr 5 µA @ 600 V
Capacitance @ Vr, F 30pF @ 4V, 1MHz
Mounting Type Through Hole
Package / Case DO-201AD, Axial
Supplier Device Package DO-201AD
Operating Temperature - Junction -50°C ~ 150°C

Product Description

The Vishay General Semiconductor – Diodes Division 1N5406-E3/51 is a DIODE GEN PURP 600V 3A DO201AD. This component belongs to the Diodes - Rectifiers - Single category and features Package of Bulk, Mounting Type of Through Hole, Speed of Standard Recovery >500ns, > 200mA (Io). As an authorized distributor, SecureChip offers genuine Vishay General Semiconductor – Diodes Division components with competitive pricing and fast delivery worldwide.

Key Specifications

  • Package: Bulk
  • Mounting Type: Through Hole
  • Speed: Standard Recovery >500ns, > 200mA (Io)

Whether you need the Vishay General Semiconductor – Diodes Division 1N5406-E3/51 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.

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