Vishay General Semiconductor – Diodes Division 1N6483HE3/96

DIODE GEN PURP 800V 1A DO213AB

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Vishay General Semiconductor – Diodes Division 1N6483HE3/96
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Key Specifications

Series SUPERECTIFIER®
Package Tape & Reel (TR)
Part Status Active
Diode Type Standard
Voltage - DC Reverse (Vr) (Max) 800 V
Current - Average Rectified (Io) 1A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io)

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Quantity Unit Price (USD)
1+ $0.1347
6,000+ $0.1347
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Technical Specifications

Series SUPERECTIFIER®
Package Tape & Reel (TR)
Part Status Active
Diode Type Standard
Voltage - DC Reverse (Vr) (Max) 800 V
Current - Average Rectified (Io) 1A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) -
Current - Reverse Leakage @ Vr 10 µA @ 800 V
Capacitance @ Vr, F 8pF @ 4V, 1MHz
Mounting Type Surface Mount
Package / Case DO-213AB, MELF (Glass)
Supplier Device Package DO-213AB
Operating Temperature - Junction -65°C ~ 175°C

Product Description

The Vishay General Semiconductor – Diodes Division 1N6483HE3/96 is a DIODE GEN PURP 800V 1A DO213AB. This component belongs to the Diodes - Rectifiers - Single category and features Package of Tape & Reel (TR), Mounting Type of Surface Mount, Speed of Standard Recovery >500ns, > 200mA (Io). As an authorized distributor, SecureChip offers genuine Vishay General Semiconductor – Diodes Division components with competitive pricing and fast delivery worldwide.

Key Specifications

  • Package: Tape & Reel (TR)
  • Mounting Type: Surface Mount
  • Speed: Standard Recovery >500ns, > 200mA (Io)

Whether you need the Vishay General Semiconductor – Diodes Division 1N6483HE3/96 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.

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