Vishay General Semiconductor – Diodes Division B125C800G-E4/51

BRIDGE RECT 1P 200V 900MA WOG

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Vishay General Semiconductor – Diodes Division B125C800G-E4/51
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Key Specifications

Series -
Package Bulk
Part Status Active
Diode Type Single Phase
Technology Standard
Voltage - Peak Reverse (Max) 200 V
Current - Average Rectified (Io) 900 mA
Voltage - Forward (Vf) (Max) @ If 1 V @ 900 mA

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Quantity Unit Price (USD)
1+ $0.2658
3,000+ $0.2658
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Technical Specifications

Series -
Package Bulk
Part Status Active
Diode Type Single Phase
Technology Standard
Voltage - Peak Reverse (Max) 200 V
Current - Average Rectified (Io) 900 mA
Voltage - Forward (Vf) (Max) @ If 1 V @ 900 mA
Current - Reverse Leakage @ Vr 10 µA @ 200 V
Operating Temperature -40°C ~ 125°C (TJ)
Mounting Type Through Hole
Package / Case 4-Circular, WOG
Supplier Device Package WOG

Product Description

The Vishay General Semiconductor – Diodes Division B125C800G-E4/51 is a BRIDGE RECT 1P 200V 900MA WOG. This component belongs to the Diodes - Bridge Rectifiers category and features Package of Bulk, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine Vishay General Semiconductor – Diodes Division components with competitive pricing and fast delivery worldwide.

Key Specifications

  • Package: Bulk
  • Mounting Type: Through Hole

Whether you need the Vishay General Semiconductor – Diodes Division B125C800G-E4/51 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.

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