Vishay General Semiconductor – Diodes Division BYG23MHE3_A/I

DIODE AVALANCHE 1KV 1.5A DO214AC

In Stock: 68,198 Genuine Part Fast Shipping
Vishay General Semiconductor – Diodes Division BYG23MHE3_A/I
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Key Specifications

Series Automotive, AEC-Q101
Package Tape & Reel (TR)
Part Status Active
Diode Type Avalanche
Voltage - DC Reverse (Vr) (Max) 1000 V
Current - Average Rectified (Io) 1.5A
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io)

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Quantity Unit Price (USD)
1+ $0.1466
7,500+ $0.1466
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Technical Specifications

Series Automotive, AEC-Q101
Package Tape & Reel (TR)
Part Status Active
Diode Type Avalanche
Voltage - DC Reverse (Vr) (Max) 1000 V
Current - Average Rectified (Io) 1.5A
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 75 ns
Current - Reverse Leakage @ Vr 5 µA @ 1000 V
Capacitance @ Vr, F -
Mounting Type Surface Mount
Package / Case DO-214AC, SMA
Supplier Device Package DO-214AC (SMA)
Operating Temperature - Junction -55°C ~ 150°C

Product Description

The Vishay General Semiconductor – Diodes Division BYG23MHE3_A/I is a DIODE AVALANCHE 1KV 1.5A DO214AC. This component belongs to the Diodes - Rectifiers - Single category and features Package of Tape & Reel (TR), Mounting Type of Surface Mount, Speed of Fast Recovery =< 500ns, > 200mA (Io). As an authorized distributor, SecureChip offers genuine Vishay General Semiconductor – Diodes Division components with competitive pricing and fast delivery worldwide.

Key Specifications

  • Package: Tape & Reel (TR)
  • Mounting Type: Surface Mount
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)

Whether you need the Vishay General Semiconductor – Diodes Division BYG23MHE3_A/I for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.

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