Vishay General Semiconductor – Diodes Division BYG23T-M3/TR3

DIODE AVALANCHE 1300V 1A DO214AC

In Stock: 66,198 Genuine Part Fast Shipping
Vishay General Semiconductor – Diodes Division BYG23T-M3/TR3
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Key Specifications

Series -
Package Tape & Reel (TR)
Part Status Active
Diode Type Avalanche
Voltage - DC Reverse (Vr) (Max) 1300 V
Current - Average Rectified (Io) 1A (DC)
Voltage - Forward (Vf) (Max) @ If 1.9 V @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io)

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Quantity Unit Price (USD)
1+ $0.1511
7,500+ $0.1511
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Technical Specifications

Series -
Package Tape & Reel (TR)
Part Status Active
Diode Type Avalanche
Voltage - DC Reverse (Vr) (Max) 1300 V
Current - Average Rectified (Io) 1A (DC)
Voltage - Forward (Vf) (Max) @ If 1.9 V @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 75 ns
Current - Reverse Leakage @ Vr 5 µA @ 1300 V
Capacitance @ Vr, F 9pF @ 4V, 1MHz
Mounting Type Surface Mount
Package / Case DO-214AC, SMA
Supplier Device Package DO-214AC (SMA)
Operating Temperature - Junction -55°C ~ 150°C

Product Description

The Vishay General Semiconductor – Diodes Division BYG23T-M3/TR3 is a DIODE AVALANCHE 1300V 1A DO214AC. This component belongs to the Diodes - Rectifiers - Single category and features Package of Tape & Reel (TR), Mounting Type of Surface Mount, Speed of Fast Recovery =< 500ns, > 200mA (Io). As an authorized distributor, SecureChip offers genuine Vishay General Semiconductor – Diodes Division components with competitive pricing and fast delivery worldwide.

Key Specifications

  • Package: Tape & Reel (TR)
  • Mounting Type: Surface Mount
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)

Whether you need the Vishay General Semiconductor – Diodes Division BYG23T-M3/TR3 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.

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