Vishay General Semiconductor – Diodes Division BYWB29-100-E3/45

DIODE GEN PURP 100V 8A TO263AB

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Vishay General Semiconductor – Diodes Division BYWB29-100-E3/45
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Key Specifications

Series -
Package Tube
Part Status Active
Diode Type Standard
Voltage - DC Reverse (Vr) (Max) 100 V
Current - Average Rectified (Io) 8A
Voltage - Forward (Vf) (Max) @ If 1.3 V @ 20 A
Speed Fast Recovery =< 500ns, > 200mA (Io)

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Quantity Unit Price (USD)
1+ $0.6755
1,000+ $0.6755
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Technical Specifications

Series -
Package Tube
Part Status Active
Diode Type Standard
Voltage - DC Reverse (Vr) (Max) 100 V
Current - Average Rectified (Io) 8A
Voltage - Forward (Vf) (Max) @ If 1.3 V @ 20 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 25 ns
Current - Reverse Leakage @ Vr 10 µA @ 100 V
Capacitance @ Vr, F -
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package TO-263AB
Operating Temperature - Junction -65°C ~ 150°C

Product Description

The Vishay General Semiconductor – Diodes Division BYWB29-100-E3/45 is a DIODE GEN PURP 100V 8A TO263AB. This component belongs to the Diodes - Rectifiers - Single category and features Package of Tube, Mounting Type of Surface Mount, Speed of Fast Recovery =< 500ns, > 200mA (Io). As an authorized distributor, SecureChip offers genuine Vishay General Semiconductor – Diodes Division components with competitive pricing and fast delivery worldwide.

Key Specifications

  • Package: Tube
  • Mounting Type: Surface Mount
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)

Whether you need the Vishay General Semiconductor – Diodes Division BYWB29-100-E3/45 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.

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