Name: Vishay General Semiconductor – Diodes Division GB35XF120K
Brand: Vishay General Semiconductor – Diodes Division
SKU: GB35XF120K
Availability: InStock

Technical Specifications

Series	-
Package	-
Part Status	Obsolete
IGBT Type	NPT
Configuration	Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	50 A
Power - Max	284 W
Vce(on) (Max) @ Vge, Ic	3V @ 15V, 50A
Current - Collector Cutoff (Max)	100 µA
Input Capacitance (Cies) @ Vce	3.475 nF @ 30 V
Input	Standard
NTC Thermistor	No
Operating Temperature	150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	ECONO2
Supplier Device Package	-

Product Description

The Vishay General Semiconductor – Diodes Division GB35XF120K is a IGBT MODULE 1200V 50A 284W. This component belongs to the Transistors - IGBTs - Modules category and features Mounting Type of Chassis Mount. As an authorized distributor, SecureChip offers genuine Vishay General Semiconductor – Diodes Division components with competitive pricing and fast delivery worldwide.

Key Specifications

Mounting Type: Chassis Mount

Whether you need the Vishay General Semiconductor – Diodes Division GB35XF120K for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.