Vishay General Semiconductor – Diodes Division NS8MTHE3_A/P

DIODE GEN PURP 1KV 8A TO220AC

In Stock: 13,564 Genuine Part Fast Shipping
Vishay General Semiconductor – Diodes Division NS8MTHE3_A/P
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Key Specifications

Series Automotive, AEC-Q101
Package Tube
Part Status Obsolete
Diode Type Standard
Voltage - DC Reverse (Vr) (Max) 1000 V
Current - Average Rectified (Io) 8A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 8 A
Speed Standard Recovery >500ns, > 200mA (Io)

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Technical Specifications

Series Automotive, AEC-Q101
Package Tube
Part Status Obsolete
Diode Type Standard
Voltage - DC Reverse (Vr) (Max) 1000 V
Current - Average Rectified (Io) 8A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 8 A
Speed Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) -
Current - Reverse Leakage @ Vr 10 µA @ 1000 V
Capacitance @ Vr, F 55pF @ 4V, 1MHz
Mounting Type Through Hole
Package / Case TO-220-2
Supplier Device Package TO-220AC
Operating Temperature - Junction -55°C ~ 150°C

Product Description

The Vishay General Semiconductor – Diodes Division NS8MTHE3_A/P is a DIODE GEN PURP 1KV 8A TO220AC. This component belongs to the Diodes - Rectifiers - Single category and features Package of Tube, Mounting Type of Through Hole, Speed of Standard Recovery >500ns, > 200mA (Io). As an authorized distributor, SecureChip offers genuine Vishay General Semiconductor – Diodes Division components with competitive pricing and fast delivery worldwide.

Key Specifications

  • Package: Tube
  • Mounting Type: Through Hole
  • Speed: Standard Recovery >500ns, > 200mA (Io)

Whether you need the Vishay General Semiconductor – Diodes Division NS8MTHE3_A/P for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.

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