Name: Vishay General Semiconductor – Diodes Division NSB8MTHE3_A/P
Brand: Vishay General Semiconductor – Diodes Division
SKU: NSB8MTHE3_A/P
Price: 0.70140 USD
Availability: InStock

Technical Specifications

Series	Automotive, AEC-Q101
Package	Tube
Part Status	Active
Diode Type	Standard
Voltage - DC Reverse (Vr) (Max)	1000 V
Current - Average Rectified (Io)	8A
Voltage - Forward (Vf) (Max) @ If	1.1 V @ 8 A
Speed	Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)	-
Current - Reverse Leakage @ Vr	10 µA @ 1000 V
Capacitance @ Vr, F	55pF @ 4V, 1MHz
Mounting Type	Surface Mount
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package	TO-263AB
Operating Temperature - Junction	-55°C ~ 150°C

Product Description

The Vishay General Semiconductor – Diodes Division NSB8MTHE3_A/P is a DIODE GEN PURP 1KV 8A TO263AB. This component belongs to the Diodes - Rectifiers - Single category and features Package of Tube, Mounting Type of Surface Mount, Speed of Standard Recovery >500ns, > 200mA (Io). As an authorized distributor, SecureChip offers genuine Vishay General Semiconductor – Diodes Division components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tube
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)

Whether you need the Vishay General Semiconductor – Diodes Division NSB8MTHE3_A/P for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.