Name: Vishay General Semiconductor – Diodes Division VB20120SG-M3/4W
Brand: Vishay General Semiconductor – Diodes Division
SKU: VB20120SG-M3/4W
Price: 0.66717 USD
Availability: InStock

Technical Specifications

Series	-
Package	Tube
Part Status	Active
Diode Type	Schottky
Voltage - DC Reverse (Vr) (Max)	120 V
Current - Average Rectified (Io)	20A
Voltage - Forward (Vf) (Max) @ If	1.33 V @ 20 A
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)	-
Current - Reverse Leakage @ Vr	250 µA @ 120 V
Capacitance @ Vr, F	-
Mounting Type	Surface Mount
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package	TO-263AB
Operating Temperature - Junction	-55°C ~ 150°C

Product Description

The Vishay General Semiconductor – Diodes Division VB20120SG-M3/4W is a DIODE SCHOTTKY 20A 120V TO-263AB. This component belongs to the Diodes - Rectifiers - Single category and features Package of Tube, Mounting Type of Surface Mount, Speed of Fast Recovery =< 500ns, > 200mA (Io). As an authorized distributor, SecureChip offers genuine Vishay General Semiconductor – Diodes Division components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tube
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)

Whether you need the Vishay General Semiconductor – Diodes Division VB20120SG-M3/4W for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.