Vishay General Semiconductor – Diodes Division VS-10ETS12-M3

DIODE GEN PURP 1.2KV 10A TO220AC

In Stock: 17,742 Genuine Part Fast Shipping
Vishay General Semiconductor – Diodes Division VS-10ETS12-M3
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Key Specifications

Series -
Package Tube
Part Status Active
Diode Type Standard
Voltage - DC Reverse (Vr) (Max) 1200 V
Current - Average Rectified (Io) 10A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 10 A
Speed Standard Recovery >500ns, > 200mA (Io)

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Quantity Unit Price (USD)
1+ $1.1273
1,000+ $1.1273
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Technical Specifications

Series -
Package Tube
Part Status Active
Diode Type Standard
Voltage - DC Reverse (Vr) (Max) 1200 V
Current - Average Rectified (Io) 10A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 10 A
Speed Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) -
Current - Reverse Leakage @ Vr 50 µA @ 1200 V
Capacitance @ Vr, F -
Mounting Type Through Hole
Package / Case TO-220-2
Supplier Device Package TO-220AC
Operating Temperature - Junction -40°C ~ 150°C

Product Description

The Vishay General Semiconductor – Diodes Division VS-10ETS12-M3 is a DIODE GEN PURP 1.2KV 10A TO220AC. This component belongs to the Diodes - Rectifiers - Single category and features Package of Tube, Mounting Type of Through Hole, Speed of Standard Recovery >500ns, > 200mA (Io). As an authorized distributor, SecureChip offers genuine Vishay General Semiconductor – Diodes Division components with competitive pricing and fast delivery worldwide.

Key Specifications

  • Package: Tube
  • Mounting Type: Through Hole
  • Speed: Standard Recovery >500ns, > 200mA (Io)

Whether you need the Vishay General Semiconductor – Diodes Division VS-10ETS12-M3 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.

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