Vishay General Semiconductor – Diodes Division VS-20ETF10STRR-M3

DIODE GEN PURP 1KV 20A TO263AB

In Stock: 10,555 Genuine Part Fast Shipping
Vishay General Semiconductor – Diodes Division VS-20ETF10STRR-M3
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Key Specifications

Series -
Package Tube
Part Status Active
Diode Type Standard
Voltage - DC Reverse (Vr) (Max) 1000 V
Current - Average Rectified (Io) 20A
Voltage - Forward (Vf) (Max) @ If 1.31 V @ 20 A
Speed Fast Recovery =< 500ns, > 200mA (Io)

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Quantity Unit Price (USD)
1+ $1.8947
800+ $1.8947
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Technical Specifications

Series -
Package Tube
Part Status Active
Diode Type Standard
Voltage - DC Reverse (Vr) (Max) 1000 V
Current - Average Rectified (Io) 20A
Voltage - Forward (Vf) (Max) @ If 1.31 V @ 20 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 400 ns
Current - Reverse Leakage @ Vr 100 µA @ 1000 V
Capacitance @ Vr, F -
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package TO-263 (D2Pak)
Operating Temperature - Junction -40°C ~ 150°C

Product Description

The Vishay General Semiconductor – Diodes Division VS-20ETF10STRR-M3 is a DIODE GEN PURP 1KV 20A TO263AB. This component belongs to the Diodes - Rectifiers - Single category and features Package of Tube, Mounting Type of Surface Mount, Speed of Fast Recovery =< 500ns, > 200mA (Io). As an authorized distributor, SecureChip offers genuine Vishay General Semiconductor – Diodes Division components with competitive pricing and fast delivery worldwide.

Key Specifications

  • Package: Tube
  • Mounting Type: Surface Mount
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)

Whether you need the Vishay General Semiconductor – Diodes Division VS-20ETF10STRR-M3 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.

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