Name: Vishay General Semiconductor – Diodes Division VS-20ETF12-M3
Brand: Vishay General Semiconductor – Diodes Division
SKU: VS-20ETF12-M3
Price: 2.02905 USD
Availability: InStock

Technical Specifications

Series	-
Package	Tube
Part Status	Active
Diode Type	Standard
Voltage - DC Reverse (Vr) (Max)	1200 V
Current - Average Rectified (Io)	20A
Voltage - Forward (Vf) (Max) @ If	1.31 V @ 20 A
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)	400 ns
Current - Reverse Leakage @ Vr	100 µA @ 1200 V
Capacitance @ Vr, F	-
Mounting Type	Through Hole
Package / Case	TO-220-2
Supplier Device Package	TO-220AC
Operating Temperature - Junction	-40°C ~ 150°C

Product Description

The Vishay General Semiconductor – Diodes Division VS-20ETF12-M3 is a DIODE GEN PURP 1.2KV 20A TO220AC. This component belongs to the Diodes - Rectifiers - Single category and features Package of Tube, Mounting Type of Through Hole, Speed of Fast Recovery =< 500ns, > 200mA (Io). As an authorized distributor, SecureChip offers genuine Vishay General Semiconductor – Diodes Division components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tube
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)

Whether you need the Vishay General Semiconductor – Diodes Division VS-20ETF12-M3 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.