Name: Vishay General Semiconductor – Diodes Division VS-8EWF12S-M3
Brand: Vishay General Semiconductor – Diodes Division
SKU: VS-8EWF12S-M3
Price: 3.56000 USD
Availability: InStock

Technical Specifications

Series	-
Package	Tube
Part Status	Active
Diode Type	Standard
Voltage - DC Reverse (Vr) (Max)	1200 V
Current - Average Rectified (Io)	8A
Voltage - Forward (Vf) (Max) @ If	1.3 V @ 8 A
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)	270 ns
Current - Reverse Leakage @ Vr	100 µA @ 1200 V
Capacitance @ Vr, F	-
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package	TO-252, (D-Pak)
Operating Temperature - Junction	-40°C ~ 150°C

Product Description

The Vishay General Semiconductor – Diodes Division VS-8EWF12S-M3 is a DIODE GEN PURP 1.2KV 8A TO252. This component belongs to the Diodes - Rectifiers - Single category and features Package of Tube, Mounting Type of Surface Mount, Speed of Fast Recovery =< 500ns, > 200mA (Io). As an authorized distributor, SecureChip offers genuine Vishay General Semiconductor – Diodes Division components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tube
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)

Whether you need the Vishay General Semiconductor – Diodes Division VS-8EWF12S-M3 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.