Vishay General Semiconductor – Diodes Division VS-8EWH02FN-M3

DIODE GEN PURP 200V 8A TO252

In Stock: 19,417 Genuine Part Fast Shipping
Vishay General Semiconductor – Diodes Division VS-8EWH02FN-M3
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Key Specifications

Series FRED Pt®
Package Tube
Part Status Active
Diode Type Standard
Voltage - DC Reverse (Vr) (Max) 200 V
Current - Average Rectified (Io) 8A
Voltage - Forward (Vf) (Max) @ If 970 mV @ 8 A
Speed Fast Recovery =< 500ns, > 200mA (Io)

Pricing

Quantity Unit Price (USD)
1+ $1.0300
75+ $0.8620
150+ $0.7144
525+ $0.5772
1,050+ $0.4737
2,550+ $0.4349
5,025+ $0.4219
Active RoHS Compliant

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Technical Specifications

Series FRED Pt®
Package Tube
Part Status Active
Diode Type Standard
Voltage - DC Reverse (Vr) (Max) 200 V
Current - Average Rectified (Io) 8A
Voltage - Forward (Vf) (Max) @ If 970 mV @ 8 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 24 ns
Current - Reverse Leakage @ Vr 5 µA @ 200 V
Capacitance @ Vr, F -
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package TO-252, (D-Pak)
Operating Temperature - Junction -65°C ~ 175°C

Product Description

The Vishay General Semiconductor – Diodes Division VS-8EWH02FN-M3 is a DIODE GEN PURP 200V 8A TO252. This component belongs to the Diodes - Rectifiers - Single category and features Package of Tube, Mounting Type of Surface Mount, Speed of Fast Recovery =< 500ns, > 200mA (Io). As an authorized distributor, SecureChip offers genuine Vishay General Semiconductor – Diodes Division components with competitive pricing and fast delivery worldwide.

Key Specifications

  • Package: Tube
  • Mounting Type: Surface Mount
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)

Whether you need the Vishay General Semiconductor – Diodes Division VS-8EWH02FN-M3 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.

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