Vishay General Semiconductor – Diodes Division VS-C10ET07T-M3

SILICON CARBIDE DIODE - TO-220

In Stock: 17,317 Genuine Part Fast Shipping
Vishay General Semiconductor – Diodes Division VS-C10ET07T-M3
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Key Specifications

Series -
Package Tube
Part Status Active
Diode Type Schottky - Single
Voltage - Peak Reverse (Max) 650V
Current - Max 10 A
Capacitance @ Vr, F 430pF @ 1V, 1MHz
Resistance @ If, F -

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Technical Specifications

Series -
Package Tube
Part Status Active
Diode Type Schottky - Single
Voltage - Peak Reverse (Max) 650V
Current - Max 10 A
Capacitance @ Vr, F 430pF @ 1V, 1MHz
Resistance @ If, F -
Power Dissipation (Max) 60 W
Operating Temperature -55°C ~ 175°C (TJ)
Package / Case TO-220-2
Supplier Device Package TO-220AC

Product Description

The Vishay General Semiconductor – Diodes Division VS-C10ET07T-M3 is a SILICON CARBIDE DIODE - TO-220. This component belongs to the Diodes - RF category and features Package of Tube. As an authorized distributor, SecureChip offers genuine Vishay General Semiconductor – Diodes Division components with competitive pricing and fast delivery worldwide.

Key Specifications

  • Package: Tube

Whether you need the Vishay General Semiconductor – Diodes Division VS-C10ET07T-M3 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.

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