Vishay General Semiconductor – Diodes Division VS-HFA06TB120S-M3

DIODE GEN PURP 1.2KV 6A D2PAK

In Stock: 14,925 Genuine Part Fast Shipping
Vishay General Semiconductor – Diodes Division VS-HFA06TB120S-M3
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Key Specifications

Series HEXFRED®
Package Tube
Part Status Active
Diode Type Standard
Voltage - DC Reverse (Vr) (Max) 1200 V
Current - Average Rectified (Io) 6A (DC)
Voltage - Forward (Vf) (Max) @ If 3.9 V @ 12 A
Speed Fast Recovery =< 500ns, > 200mA (Io)

Pricing

Quantity Unit Price (USD)
1+ $1.3400
50+ $1.1576
100+ $0.9666
500+ $0.8138
1,000+ $0.6610
2,500+ $0.6228
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Technical Specifications

Series HEXFRED®
Package Tube
Part Status Active
Diode Type Standard
Voltage - DC Reverse (Vr) (Max) 1200 V
Current - Average Rectified (Io) 6A (DC)
Voltage - Forward (Vf) (Max) @ If 3.9 V @ 12 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 80 ns
Current - Reverse Leakage @ Vr 5 µA @ 1200 V
Capacitance @ Vr, F -
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package TO-263AB (D²PAK)
Operating Temperature - Junction -55°C ~ 150°C

Product Description

The Vishay General Semiconductor – Diodes Division VS-HFA06TB120S-M3 is a DIODE GEN PURP 1.2KV 6A D2PAK. This component belongs to the Diodes - Rectifiers - Single category and features Package of Tube, Mounting Type of Surface Mount, Speed of Fast Recovery =< 500ns, > 200mA (Io). As an authorized distributor, SecureChip offers genuine Vishay General Semiconductor – Diodes Division components with competitive pricing and fast delivery worldwide.

Key Specifications

  • Package: Tube
  • Mounting Type: Surface Mount
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)

Whether you need the Vishay General Semiconductor – Diodes Division VS-HFA06TB120S-M3 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.

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