Name: Vishay / Siliconix 2N6661-E3
Brand: Vishay / Siliconix
SKU: 2N6661-E3
Availability: InStock

Technical Specifications

Series	-
Package	Tube
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	90 V
Current - Continuous Drain (Id) @ 25°C	860mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Rds On (Max) @ Id, Vgs	4Ohm @ 1A, 10V
Vgs(th) (Max) @ Id	2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	50 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	725mW (Ta), 6.25W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-39
Package / Case	TO-205AD, TO-39-3 Metal Can

Product Description

The Vishay / Siliconix 2N6661-E3 is a MOSFET N-CH 90V 860MA TO39. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tube, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine Vishay / Siliconix components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tube
Mounting Type: Through Hole

Whether you need the Vishay / Siliconix 2N6661-E3 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.