Name: Vishay / Siliconix 3N163-E3
Brand: Vishay / Siliconix
SKU: 3N163-E3
Availability: InStock

Technical Specifications

Series	-
Package	Bulk
Part Status	Obsolete
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	50mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	20V
Rds On (Max) @ Id, Vgs	250Ohm @ 100µA, 20V
Vgs(th) (Max) @ Id	5V @ 10µA
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	3.5 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	375mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-72
Package / Case	TO-206AF, TO-72-4 Metal Can

Product Description

The Vishay / Siliconix 3N163-E3 is a MOSFET P-CH 40V 50MA TO72. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Bulk, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine Vishay / Siliconix components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Bulk
Mounting Type: Through Hole

Whether you need the Vishay / Siliconix 3N163-E3 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.