Name: Vishay / Siliconix IRF9Z10PBF-BE3
Brand: Vishay / Siliconix
SKU: IRF9Z10PBF-BE3
Price: 1.70000 USD
Availability: InStock

Technical Specifications

Series	-
Package	Tube
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	6.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	500mOhm @ 4A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	270 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	43W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3

Product Description

The Vishay / Siliconix IRF9Z10PBF-BE3 is a MOSFET P-CH 60V 6.7A TO220AB. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tube, Mounting Type of Through Hole. As an authorized distributor, SecureChip offers genuine Vishay / Siliconix components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tube
Mounting Type: Through Hole

Whether you need the Vishay / Siliconix IRF9Z10PBF-BE3 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.