Name: Vishay / Siliconix SI2312BDS-T1-GE3
Brand: Vishay / Siliconix
SKU: SI2312BDS-T1-GE3
Price: 0.52000 USD
Availability: InStock

Technical Specifications

Series	TrenchFET®
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	3.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	31mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id	850mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 4.5 V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	-
FET Feature	-
Power Dissipation (Max)	750mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

Product Description

The Vishay / Siliconix SI2312BDS-T1-GE3 is a MOSFET N-CH 20V 3.9A SOT23-3. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tape & Reel (TR)Cut Tape (CT)Digi-Reel®, Mounting Type of Surface Mount. As an authorized distributor, SecureChip offers genuine Vishay / Siliconix components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Mounting Type: Surface Mount

Whether you need the Vishay / Siliconix SI2312BDS-T1-GE3 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.