Name: Vishay / Siliconix SIA456DJ-T3-GE3
Brand: Vishay / Siliconix
SKU: SIA456DJ-T3-GE3
Price: 0.40050 USD
Availability: InStock

Technical Specifications

Series	TrenchFET®
Package	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	1.1A (Ta), 2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	1.38Ohm @ 750mA, 4.5V
Vgs(th) (Max) @ Id	1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	14.5 nC @ 10 V
Vgs (Max)	±16V
Input Capacitance (Ciss) (Max) @ Vds	350 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	3.5W (Ta), 19W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SC-70-6 Single
Package / Case	PowerPAK® SC-70-6

Product Description

The Vishay / Siliconix SIA456DJ-T3-GE3 is a MOSFET N-CH 200V 1.1A/2.6A PPAK. This component belongs to the Transistors - FETs, MOSFETs - Single category and features Package of Tape & Reel (TR), Mounting Type of Surface Mount. As an authorized distributor, SecureChip offers genuine Vishay / Siliconix components with competitive pricing and fast delivery worldwide.

Key Specifications

Package: Tape & Reel (TR)
Mounting Type: Surface Mount

Whether you need the Vishay / Siliconix SIA456DJ-T3-GE3 for prototype design, mass production, or maintenance and repair, our ample stock and technical support team ensure you receive the right components on time.